To provide a method of manufacturing a semiconductor single-crystal wafer, which reduces shape defects such as dispersion of thickness and warpage, in a semiconductor single-crystal wafer.

This method of manufacturing a semiconductor single-crystal wafer is used for slicing a semiconductor single-crystal ingot by a wire saw. In the method of manufacturing a semiconductor single-crystal wafer, an auxiliary tool formed of ceramics or a resin is attached to the semiconductor single-crystal ingot, and the slicing is started from the auxiliary tool.