METHOD OF MANUFACTURING SEMICONDUCTOR

Title:

METHOD OF MANUFACTURING SEMICONDUCTOR

Document Type and Number:

Japanese Patent JP2009033189

Kind Code:

A

Abstract:

To provide a single crystal and a polycrystal under low temperature, and to provide a highly reliable semiconductor device using solid phase growing method.

In the method of depositing an amorphous semiconductor thin film on a substrate or an insulation film, the average atomic distance distribution of the amorphous film comprising the main component of the film is almost the same as that of the single crystal. A recrystallization energy is applied to the amorphous film to form a single crystal semiconductor film 3 with solid phase growth.

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Inventors:

OKADA TAKAKO
KANBAYASHI SHIGERU
YABUKI SO
ONGA SHINJI
TSUNASHIMA YOSHITAKA
MIKATA YUICHI
OKANO HARUO

Application Number:

JP2008237034A

Publication Date:

February 12, 2009

Filing Date:

September 16, 2008

Export Citation:

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Assignee:

TOSHIBA CORP

International Classes:

H01L21/20; H01L21/329; H01L21/331; H01L21/336; H01L21/822; H01L21/8222; H01L21/8248; H01L21/8249; H01L27/04; H01L27/06; H01L29/73; H01L29/78; H01L29/786

Domestic Patent References:

JPH04127519A	1992-04-28
JPH04196435A	1992-07-16
JPH05175456A	1993-07-13
JPH04127519A	1992-04-28
JPH04196435A	1992-07-16
JPH05175456A	1993-07-13

Attorney, Agent or Firm:

Takahisa Kimura

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