酸化シリコン膜又は窒化シリコン膜の製造方法

Title:

酸化シリコン膜又は窒化シリコン膜の製造方法

Document Type and Number:

Japanese Patent JP4052454

Kind Code:

B2

Abstract:

A plasma processing apparatus (81) and method is disclosed in which a ring-shaped antenna (91) is disposed at a top of a ceiling surface of a processing chamber (83), power is supplied at a frequency of 10MHz to 30MHz to the antenna (91) by power supply means (92) to generate a plasma within the processing chamber (83), and processing is applied to a surface of a substrate (86) by atoms and molecules excited and activated there. The substrate (86) is located in a region where the plasma has a high density, but has a low electron temperature.

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Inventors:

Tadashi Shimazu
Ryuichi Matsuda
Masahiko Inoue

Application Number:

JP2002351250A

Publication Date:

February 27, 2008

Filing Date:

December 03, 2002

Export Citation:

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Assignee:

MITSUBISHI HEAVY INDUSTRIES,LTD.

International Classes:

C23C16/507; H01L21/31; B01J19/08; H01J37/32; H01L21/205; H01L21/316; H01L21/318; H05H1/46

Domestic Patent References:

JP10070108A
JP9008010A
JP2000215999A
JP2000124190A
JP7201813A

Attorney, Agent or Firm:

Toshiro Mitsuishi
Tadahiro Mitsuishi
Yasuyuki Tanaka
Hiroshi Matsumoto

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