To provide a method of manufacturing a silicon single crystal capable of adjusting a silicon melt surface temperature to a proper seeding temperature by stably measuring the silicon melt surface temperature in a seeding process in manufacturing a silicon single crystal by a horizontal magnetic field application Czochralski method (HMCZ method), remarkably suppressing generation of dislocations during cone growth caused by a failure of drawing or improper drawing as compared with a conventional one, and thereby improving productivity.
In this method of manufacturing a silicon single crystal, a silicon melt surface temperature distribution is previously measured by a two-dimensional thermometer before landing a seed crystal on a silicon melt, a range 19 where the melt surface temperature can be set in a low-temperature region lower than the other regions is identified, and thereafter, when the surface temperature of the silicon melt surface is measured by a radiation thermometer to adjust the melt temperature in landing of the seed crystal on the silicon melt 3 by the measurement temperature, the temperature measurement point by the radiation thermometer is set outside the range 19 that can be in a low-temperature region.
TAKASHIMA SHO
IWASAKI ATSUSHI
KITAGAWA MASANORI
MITAMURA NOBUAKI
| JP2002104896A | 2002-04-10 |
| WO2003091483A1 | 2003-11-06 |
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