Title:
シリコン単結晶の製造方法
Document Type and Number:
Japanese Patent JP6729484
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To suppress reduction of oxygen concentration at a periphery of a silicon single crystal and thus to enhance uniformity of in-plane distribution of oxygen concentration in a production method of the silicon single crystal by a HMCZ process.SOLUTION: In a production method of a silicon single crystal by a Czochralski process, a silicon single crystal 3 is drawn up from silicon melt 2 in a quartz crucible 11 while the silicon melt 2 is heated by a heater 15 arranged around the quartz crucible 11 and applied to by a transverse magnetic field. The silicon single crystal is drawn up under the crystal draw-up condition that the maximum temperature of the internal surface of the quartz crucible 11 contacting the silicon melt 2 is 1,438°C or higher and the maximum temperature point is located in a projected region of the silicon single crystal in a cross section that passes a central axis of the crystal and is vertical to the application direction of the transverse magnetic field.SELECTED DRAWING: Figure 1
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Inventors:
Yokoyama Ryusuke
Wataru Sugimura
Wataru Sugimura
Application Number:
JP2017093091A
Publication Date:
July 22, 2020
Filing Date:
May 09, 2017
Export Citation:
Assignee:
Sumco inc.
International Classes:
C30B29/06; C30B15/20; F27B14/14; F27B14/20
Domestic Patent References:
| JP2003002782A | ||||
| JP2004217502A | ||||
| JP2007261846A | ||||
| JP2001158688A | ||||
| JP2014148448A | ||||
| JP2004315292A |
Attorney, Agent or Firm:
Mitsuhiro Washito
Ogata Japanese
Yasuyuki Kurose
Ogata Japanese
Yasuyuki Kurose