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Title:
METHOD OF MEASURING MAGNETORESISTANCE EFFECT RATE OF MAGNETORESISTIVE ELEMENT
Document Type and Number:
Japanese Patent JP2010157292
Kind Code:
A
Abstract:

To provide a method of measuring a magnetoresistance effect rate of a magnetoresistive element by which highly accurate measurement value can be obtained.

The method of measuring the magnetoresistance effect rate includes the steps of: determining a magnetization direction of a pinned magnetic layer; determining a magnetization direction of a free magnetic layer; obtaining the maximum resistance value by obtaining a ρH curve by applying an external magnetic field of which the strength is increased gradually from 0 in the direction of an angle being larger than 90° and smaller than 180° for the magnetization direction of the free magnetic layer, also being larger than 90° and smaller than 180° for the magnetization direction of the pinned magnetic layer; obtaining the minimum resistance value by obtaining the ρH curve by applying an external magnetic field of which the strength is increased gradually from 0 in the direction of an angle being larger than 180°and smaller than 270° for the magnetization direction of the free magnetic layer, also being larger than 0° and smaller than 90° for the magnetization direction of the pinned magnetic layer; and calculating magnetoresistance effect rate from the maximum resistance value and the minimum resistance value.

COPYRIGHT: (C)2010,JPO&INPIT


Inventors:
YO TO
MATSUBARA MASATO
ODAGIRI MITSURU
Application Number:
JP2008335406A
Publication Date:
July 15, 2010
Filing Date:
December 27, 2008
Export Citation:
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Assignee:
FUJITSU LTD
International Classes:
G11B5/455; G11B5/39; H01L21/8246; H01L27/105; H01L43/08; H01L43/12
Attorney, Agent or Firm:
Takao Watanuki
Horimai Kazuharu