Title:
単結晶シリコンの抵抗率測定方法
Document Type and Number:
Japanese Patent JP7172878
Kind Code:
B2
Abstract:
Improve the accuracy of repeated measurement of the measuring method of resistivity of a sample wafer for inspection cut from a single crystal silicon ingot using a band saw or the like. Measuring method of resistivity of single crystal silicon includes: a step of cutting a single crystal silicon ingot in a radial direction to cut off a sample wafer (S12), a step of cutting a sample chip from the sample wafer (S13), a step of polish processing the surface of the sample chip (S14), and a step of measuring the resistivity of the sample chip after the polishing process (S16).
Inventors:
Yoshihiro Ohshiro
Katsunori Kuriyama
Yoshiyuki Suzuki
Takayuki Kitayama
Katsunori Kuriyama
Yoshiyuki Suzuki
Takayuki Kitayama
Application Number:
JP2019118631A
Publication Date:
November 16, 2022
Filing Date:
June 26, 2019
Export Citation:
Assignee:
Sumco inc.
International Classes:
H01L21/66; C30B29/06; G01N27/04; H01L21/304
Domestic Patent References:
| JP2010225695A | ||||
| JP2019079924A | ||||
| JP2002050554A | ||||
| JP2002110491A | ||||
| JP2011077413A | ||||
| JP2001001335A | ||||
| JP2018093086A | ||||
| JP2019089676A |
Attorney, Agent or Firm:
Mitsuhiro Washito
Ogata Japanese
Ogata Japanese
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