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Title:
METHOD FOR MELTING POLYCRYSTALLINE SILICON
Document Type and Number:
Japanese Patent JP2010235321
Kind Code:
A
Abstract:

To provide a method for melting polycrystalline silicon, capable of reducing the melting time of dendritic, acicular or planar polycrystalline silicon produced by a zinc reduction method.

The method for melting polycrystalline silicon comprises: charging a melting container with dendritic, acicular, or planar polycrystalline silicon produced by a zinc reduction method with block silicon prepared by crushing a silicon ingot; and heating the filling material to 1,410 to 1,600°C and melting the material.


Inventors:
MIZOGUCHI TAKASHI
ITO KOJI
Application Number:
JP2009081797A
Publication Date:
October 21, 2010
Filing Date:
March 30, 2009
Export Citation:
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Assignee:
COSMO OIL CO LTD
International Classes:
C01B33/02
Domestic Patent References:
JP2004035382A2004-02-05
JP2004018370A2004-01-22
Attorney, Agent or Firm:
Kenji Akatsuka
Yasuyuki Sakata
Ken Shibuya



 
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