Title:
METHOD OF PATTERN FORMATION
Document Type and Number:
Japanese Patent JP2565119
Kind Code:
B2
Abstract:
PURPOSE: To provide the formation method of a pattern whose cross section is T-shaped and which can be formed by lifting off a low-resistance electrode whose cross section is T-shaped.
CONSTITUTION: A lower-layer resist opening 13 is formed in a lower-layer resist 11 which is formed so as to be applied on a substrate 10, an upper-layer resist 14 is formed so as to be applied on it, a mixing layer 15 with the lower-layer resist is formed at least in an ammonia (NH3) atmosphere, within a temperature range of 20 to 110°C and for 60 minutes or lower, the upper-layer resist 13 is exposed to ultraviolet ray 16, and a pattern whose cross section is T-shaped is formed.
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Inventors:
SAMOTO NORIHIKO
Application Number:
JP30025393A
Publication Date:
December 18, 1996
Filing Date:
November 30, 1993
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
G03F7/26; H01L21/027; H01L21/285; H01L21/302; H01L21/3065; H01L21/338; (IPC1-7): H01L21/027; G03F7/26; H01L21/3065
Domestic Patent References:
| JP590300A | ||||
| JP5623783A | ||||
| JP3135075A | ||||
| JP60257522A | ||||
| JP58132927A |
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)