PURPOSE: To provide a method for patterning thin films which is capable of executing patterning with high anisotropy and simplifying a thin film forming process without adopting a protective film forming process and cooling system and a method for forming a mask for X-ray exposing having excellent X-ray absorptivity.
CONSTITUTION: N2 and O2 more than the N2 and O2 to be naturally included in W or a mixture composed of the W are positively incorporated into the W or the mixture composed of the W prior to patterning, by which the thin film 2 having an amorphous structure is formed. The N2 or O2 incorporated in the adequate amt. into the thin film 2 suppresses progression of etching with the free radicals generated at the time of patterning. Namely, the etching with the accelerated ions is dominant in patterning of the thin film 2. The undercuts of the side walls of the patterned thin films 2 are decreased and the high anisotropy is obtd. Further, the N2 to be incorporated into the W is adjusted to the adequate amt. and the mask for X-ray exposing having the excellent X-ray absorptivity is formed.
YUASA YOSHIHIRO
YAMAOKA YOSHIKAZU
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