Title:
METHOD OF PLASMA-ETCHING THIN OXIDE FILM
Document Type and Number:
Japanese Patent JPS53134745
Kind Code:
A
Abstract:
PURPOSE: To simplify process of etching by selectively etching desired and selected portion with organic material formed thereon or their boundaries on a substrate having an oxide film.
Inventors:
TAKAHASHI KENJI
Application Number:
JP4844877A
Publication Date:
November 24, 1978
Filing Date:
April 28, 1977
Export Citation:
Assignee:
TOKYO SHIBAURA ELECTRIC CO
International Classes:
C23F4/00; C23F1/00; H01L21/302; H01L21/3065; (IPC1-7): B23P1/20; C23F1/00