PURPOSE: To carry out vacuum deposition free from splashing by performing ion bombardment by means of a reducing-gas plasma prior to heating a vapor deposition metal.
CONSTITUTION: The inside of a chamber 1 is evacuated, and a reducing gas is introduced via a reducing gas introducing hole 5. A reducing-gas plasma is produced by turning on a high frequency electric power source 10. An electron beam 6 is generated by actuating an electron beam generation source 7 and is applied to an evaporation metal 8 to melt this metal 8 by heating. The metal 8 is evaporated and the resulting evaporated substance in a vapor-phase state is solidified on a substrate 3, by which a thin film is formed. By carrying out ion bombardment by means of the reducing-gas plasma before heating and melting the evaporation metal 8, O2 gas adsorbed by the surface of the evaporation metal 8 can be removed. Further, an oxide film on the surface layer of the evaporation metal 8 can be removed by reduction, and splashing can perfectly be prevented.
AOYAMA MASAYOSHI
ONUKI MITSUAKI
YAMAGUCHI KENJI
NAKADA YOSHIHIRO
