METHOD OF PROCESSING SEMICONDUCTOR ELEMENT BY ION BEAM

Title:

METHOD OF PROCESSING SEMICONDUCTOR ELEMENT BY ION BEAM

Document Type and Number:

Japanese Patent JPH03116724

Kind Code:

A

Abstract:

PURPOSE: To enable a semiconductor element to obtain an optimum working end point for a working such as interconnection cutting with high yield by monitoring the detector signal of sputter particles of a metal constituent, and by working the element additionally by a factor corresponding to the thickness of a metal layer from a point where that signal has become rapidly intensified by oxygen in the insulator.

CONSTITUTION: A main computer 29 senses a rapid rise of Al signal among secondary particle signals 30 detected by a secondary particle detector 9. After this rise, a deflection electrode 7 is driven by a beam deflection controller 26 regarding a desired proportion corresponding to the thickness of an Al layer input by an input means 33, thereby additionally working an LSI element 12 by irradiation with a focused ion beam 13. Then, actuation of a blanking electrode 5 via a blanking controller 24 to stop its irradiation allows the complete removal of Al and the high-yield electric cutting of Al wiring 1.

More Like This:

WO/2003/028118	III GROUP NITRIDE QUANTUM DOT AND PRODUCTION METHOD THEREFOR
WO/2020/195903	FILM FORMATION METHOD AND FILM FORMATION DEVICE
JP2000173931	SHIELDING STRUCTURE OF TREATMENT CHAMBER, AND CVD SYSTEM, PVD SYSTEM, AND ETCHING SYSTEM USING THE SAME

Inventors:

ITO FUMIKAZU
SHIMASE AKIRA
HARAICHI SATOSHI
TAKAHASHI TAKAHIKO

Application Number:

JP25188489A

Publication Date:

May 17, 1991

Filing Date:

September 29, 1989

Export Citation:

Click for automatic bibliography generation Help

Assignee:

HITACHI LTD

International Classes:

H01L21/302; H01L21/3065; H01L21/3205; H01L21/3213; (IPC1-7): H01L21/302; H01L21/3205

Attorney, Agent or Firm:

Katsuo Ogawa (1 person outside)

Previous Patent: JPH03116723

Next Patent: DEVICE FOR ADJUSTING ROLL CROWN RATE IN HEATING FURNACE