To provide a method of producing a display with which thin film transistors in which on-currents are uniform are obtained, and thus uneven luminance of light emitting elements connected to the thin film transistors is prevented, while decreasing the time necessary for a step of crystallization annealing of a semiconductor thin film.

Gate electrodes 14b are formed on a substrate 1 so that an arrangement of a source S and a drain D of a thin film transistor Tr2 formed in each of pixels a on the substrate 1 may be reversed in a pixel a row direction in a first pixel row A1 and a second pixel row A2. A gate insulating film 31 and an amorphous semiconductor thin film 32 are formed on the substrate 1 in such order so as to cover the gate electrodes. The semiconductor thin film 32 is crystallized by irradiating the semiconductor thin film 32 above the gate electrodes 14b with a laser beam Lh while scanning the laser beam Lh so that a scanning direction v(-v) may be directed from the drain D side toward the source S side in the pixel row direction.