Title:
METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JP2013035696
Kind Code:
A
Abstract:
To prevent thick film growth inhibition of a crystal caused by generation of a polycrystal, in crystal growth having a nonpolar surface and a semipolar surface as main surfaces.
In this method for producing a group III nitride semiconductor single crystal for growing a group III nitride semiconductor crystal on a base substrate comprising a group III nitride crystal and having a nonpolar surface or a semipolar surface as a main surface, when defining a surface tilted by ±90° from the main surface to the c-axis direction as K-surface, the base substrate having a side surface having a specifically-angled surface to the K-surface is used to thereby solve the problem of the generation of a polycrystal.
Inventors:
ENATSU YUKI
KUBO SHUICHI
KIYOMI KAZUMASA
KUBO SHUICHI
KIYOMI KAZUMASA
Application Number:
JP2011170470A
Publication Date:
February 21, 2013
Filing Date:
August 03, 2011
Export Citation:
Assignee:
MITSUBISHI CHEM CORP
International Classes:
C30B29/38; C23C16/34; C30B25/20; H01L21/205
Attorney, Agent or Firm:
Yoshiyuki Kawaguchi
Hidemi Matsukura
Daisuke Takada
Shinichi Sanuki
Takeshi Niwa
Kaoru Kosaka
Toshiaki Shimoda
Hidemi Matsukura
Daisuke Takada
Shinichi Sanuki
Takeshi Niwa
Kaoru Kosaka
Toshiaki Shimoda
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