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Title:
METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR SUBSTRATE
Document Type and Number:
Japanese Patent JP2013060349
Kind Code:
A
Abstract:

To provide a method for producing a nitride semiconductor substrate reducible of a cleavage during slicing of a nitride semiconductor single crystal, and capable of improving a yield ratio of the nitride semiconductor substrate.

The method for producing the nitride semiconductor substrate includes steps of: growing a nitride semiconductor single crystal on a seed crystal substrate by vapor phase epitaxial method; grinding an outer peripheral surface of the grown nitride semiconductor single crystal; and slicing the nitride semiconductor single crystal with its outer peripheral surface ground, wherein a grinding amount of the outer peripheral surface of the nitride semiconductor single crystal in the step of grinding is 1.5 mm or more.


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Inventors:
FUJIKURA TSUNEAKI
Application Number:
JP2011201491A
Publication Date:
April 04, 2013
Filing Date:
September 15, 2011
Export Citation:
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Assignee:
HITACHI CABLE
International Classes:
C30B33/00; C30B29/38; H01L21/304
Domestic Patent References:
JP2005200250A2005-07-28
JP2010040696A2010-02-18
JP2004006997A2004-01-08
Foreign References:
WO2006120736A12006-11-16
Attorney, Agent or Firm:
Toru Yui
Hitoshi Kiyono
Fukuoka Masahiro



 
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