Title:
METHOD OF PRODUCING PATTERN OF CONDUCTIVE MATERIAL
Document Type and Number:
Japanese Patent JPS6097642
Kind Code:
A
Abstract:
A method of providing narrow conductor tracks (metal silicide). According to the invention, a pattern of polycrystalline silicon (3) covered by a protective layer (4) is converted along the edges into silicide. This is effected in that the device is covered by a suitable metal (7) and is then silicidized laterally over a distance of 20-500 nm. The remaining silicon (3) is removed selectively. The tracks (8) obtained can serve as conductor masks or, for example, as a plate of a capacitor.
Inventors:
PIEERE HERUMANUSU UORUREE
YOHANESU FURANSHISUKASU KORUNE
YOHANESU FURANSHISUKASU KORUNE
Application Number:
JP21153484A
Publication Date:
May 31, 1985
Filing Date:
October 11, 1984
Export Citation:
Assignee:
PHILIPS NV
International Classes:
H01L21/3205; H01L21/02; H01L21/033; H01L21/266; H01L21/28; H01L21/3213; H01L21/336; H01L21/339; H01L23/52; (IPC1-7): H01L21/88
Attorney, Agent or Firm:
Akihide Sugimura
Previous Patent: An amorphous carbon grain child's manufacturing method, amorphous carbon grain child, cathode materi...
Next Patent: JPS6097643
Next Patent: JPS6097643