METHOD FOR PRODUCING PHASE SHIFTING MASK AND METHOD FOR PRODUCING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

Title:

METHOD FOR PRODUCING PHASE SHIFTING MASK AND METHOD FOR PRODUCING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

Document Type and Number:

Japanese Patent JP3427067

Kind Code:

B2

Abstract:

PROBLEM TO BE SOLVED: To examine the patterns of a phase shifting mask to see whether they are good or bad.
SOLUTION: When data of the mask patterns of a phase shifting mask are drawn up, the pattern data are separated into an actual pattern data layer having data of actual patterns and a phase shifting pattern data layer having data of the phase shifting patterns and the mask patterns are examined to find whether they satisfy the rule of the interval between identical phase patterns in which the phases of light passing through adjacent patterns become identical with each other. The mask patterns are also examined to find whether they satisfy the rule of the interval between different phase patterns in which the phases of light passing through adjacent patterns become different from each other.

Inventors:

Shunji Takekuma
Haruo Ii
Kazuya Ito

Application Number:

JP2002125893A

Publication Date:

July 14, 2003

Filing Date:

July 20, 1992

Export Citation:

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Assignee:

株式会社日立製作所
株式会社日立超エル・エス・アイ・システムズ

International Classes:

G03F1/29; G03F1/36; G03F1/68; G03F1/84; H01L21/027; (IPC1-7): G03F1/08; H01L21/027

Domestic Patent References:

JP635171A
JP4127150A

Attorney, Agent or Firm:

Yamato Tsutsui

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