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Title:
METHOD FOR PRODUCING SEMICONDUCTOR GAS
Document Type and Number:
Japanese Patent JP2013112612
Kind Code:
A
Abstract:

To provide an industrially applicable impurities-removing method, alternative to distillation, capable of producing monofluoromethane substantially containing neither trifluoromethane nor unsaturated compounds, in view of the fact that: monofluoromethane produced or treated in a vapor phase may be accompanied by trifluoromethane due to equilibrium, fluorination reaction or disproportional reaction; wherein, as their boiling points are close to each other, they cannot be efficiently separated from each other by distillation.

A method for producing monofluoromethane is provided, including a step of bringing a trifluoromethane-containing monofluoromethane composition into contact with a trifluoromethane treatment liquid containing an amide of formula (1) (wherein, R1, R2 and R3 are each H or alkyl, being optionally bound together to form a ring, wherein the carbon atom on the ring is optionally substituted by an oxygen, nitrogen and/or sulfur atom) and a base; and a step of bringing the composition into contact with sulfuric acid.


Inventors:
OKAMOTO MASAMUNE
TAKADA NAOKADO
IMURA HIDEAKI
Application Number:
JP2011256905A
Publication Date:
June 10, 2013
Filing Date:
November 25, 2011
Export Citation:
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Assignee:
CENTRAL GLASS CO LTD
International Classes:
C07C17/38; C07C19/08
Attorney, Agent or Firm:
Yoshiyuki Nishi