Title:
炭化珪素単結晶の製造方法
Document Type and Number:
Japanese Patent JP5346788
Kind Code:
B2
Abstract:
The process for producing silicon carbide single crystals of the present invention comprises a step for growing single crystals of silicon carbide on a silicon carbide seed crystal by supplying a sublimed gas of a silicon carbide source material to the silicon carbide seed crystal arranged on a pedestal, wherein a spacing member composed of silicon carbide is arranged between the pedestal and the silicon carbide seed crystal, the spacing member is non-adhesively held on the pedestal by a supporting member, the silicon carbide seed crystal is adhered to the surface of the spacing member on the opposite side of the pedestal, and the spacing member and the supporting member are relatively arranged so that the adhesive surface of the spacing member adhered with the silicon carbide seed crystal is separated by 5 mm or more in the vertical direction from the lowest position of the supporting member.
Inventors:
Takashi Masuda
Hisako Ogoi
Katsuhiko Hashimoto
Hisako Ogoi
Katsuhiko Hashimoto
Application Number:
JP2009271712A
Publication Date:
November 20, 2013
Filing Date:
November 30, 2009
Export Citation:
Assignee:
SHOWA DENKO K.K.
International Classes:
C30B29/36
Domestic Patent References:
| JP2003504297A | ||||
| JP2006143511A | ||||
| JP2007326743A |
Attorney, Agent or Firm:
Masatake Shiga
Tadashi Takahashi
Takashi Watanabe
Suzuki Mitsuyoshi
Kazuya Nishi
Yasuhiko Murayama
Tadashi Takahashi
Takashi Watanabe
Suzuki Mitsuyoshi
Kazuya Nishi
Yasuhiko Murayama