METHOD FOR PRODUCING SINGLE CRYSTAL SUBSTRATE WITH SiC EPITAXIAL FILM

Title:

METHOD FOR PRODUCING SINGLE CRYSTAL SUBSTRATE WITH SiC EPITAXIAL FILM

Document Type and Number:

Japanese Patent JP2008222509

Kind Code:

A

Abstract:

To provide a method for producing a single crystal substrate with an SiC epitaxial film by which crystal defects in the SiC epitaxial film can be reduced and the crystal quality of the film can be improved.

The method comprises: a film deposition process for depositing an SiC epitaxial film 2 on an off-cut SiC single crystal substrate 1; and a heating process for reducing crystal defects by heating the deposited SiC epitaxial film 2 so as to generate step bunching 3 on the surface of the SiC epitaxial film 2. Further, the method may include a flattening process for removing the step bunching 3 generated on the surface of the SiC epitaxial film 2 by CMP (chemomechanical polishing), gas etching in a hydrogen atmosphere, or the like, for producing a device.

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Inventors:

KIYOZAWA TSUTOMU

Application Number:

JP2007064765A

Publication Date:

September 25, 2008

Filing Date:

March 14, 2007

Export Citation:

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Assignee:

MATSUSHITA ELECTRIC IND CO LTD

International Classes:

C30B29/36; C30B25/20; C30B33/02; C30B33/08; H01L21/205

Domestic Patent References:

JP2008053343A	2008-03-06
JP2003234301A	2003-08-22
JP2005277229A	2005-10-06

Attorney, Agent or Firm:

Fumio Iwahashi
Hiroki Naito
Daisuke Nagano

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