Title:
METHOD FOR PULLING UP SILICON SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JPS58172295
Kind Code:
A
Abstract:
PURPOSE:To increase the usage life of the graphite crucible of an apparatus for pulling up an Si single crystal, by interposing SiC between the quartz crucible and the graphite crucible. CONSTITUTION:The graphite crucible is heated to a high temp. during the pulling-up of an Si single crystal, so the quartz crucible reacts with the graphite crucible, forming CO and SiO. This SiO reacts with the graphite crucible, reducing the usage life of the crucible. In order to inhibit the reaction of the graphite crucible with the quartz crucible, the inside of the graphite crucible which is in contact with the quartz crucible is converted into SiC or covered with SiC. For example, the inside of the graphite crucible is coated with SiHCl3 and toluene to a prescribed thickness in a flow of gaseous hydrogen and heat-treated at a high temp. to cover the inside with SiC. or SiO formed by reacting quartz with Si is reacted with graphite to carry out conversion into SiC.
Inventors:
AOYAMA YOSHIJI
YASUDA SHIGEO
TAKAHASHI NAOMI
TAKEUCHI SADAFUMI
OBARA YASUHIRO
YASUDA SHIGEO
TAKAHASHI NAOMI
TAKEUCHI SADAFUMI
OBARA YASUHIRO
Application Number:
JP5264482A
Publication Date:
October 11, 1983
Filing Date:
March 30, 1982
Export Citation:
Assignee:
IBIGAWA ELECTRIC IND CO LTD
International Classes:
C04B41/87; C30B15/10; C30B29/06; H01L21/208; (IPC1-7): C04B41/06; C30B15/00; C30B29/06; H01L21/02; H01L21/208