Title:
METHOD FOR PULLING UP SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JPH02102196
Kind Code:
A
Abstract:
PURPOSE:To suppress occurrence of multiple crystal by controlling temperature in the bottom of crucible to specific temperature when a single crystal is pulled up under high pressure according to LEC method using a heater alternately providing an upper slit and lower slit on the cylindrical side wall. CONSTITUTION:A heater 1 in which an upper slit 14 and lower slit 15 are alternately formed in vertical direction from an upper part and lower part of cylindrical side wall is provided on the outer circumference of vertical type crucible 3. A raw material in the crucible 3 is melted by the heater 1 and the surface of melt 5 is covered with an inert liquid encapsulizing agent 6 and a single crystal 10 is pulled up under high pressure according to a liquid capsule pulling-up method. At this time, when temperature in the bottom of the crucible 3 is expressed by Tc ( deg.C) and depth in the crucible 3 of raw material melt is expressed by L (mm), temperature in the bottom of the crucible 3 is controlled so as to satisfy the relationship expressed by the formula. Thereby occurrence of multiple crystal from outer circumference part of pulling-up crystal 10 can be prevented, since solid-liquid interface can be formed into protruded shape to the melt.
Inventors:
NISHIBE NATAMI
OZAWA SHOICHI
KIKUTA TOSHIO
OZAWA SHOICHI
KIKUTA TOSHIO
Application Number:
JP25496288A
Publication Date:
April 13, 1990
Filing Date:
October 12, 1988
Export Citation:
Assignee:
FURUKAWA ELECTRIC CO LTD
International Classes:
C30B27/02; C30B29/42; H01L21/208; (IPC1-7): C30B27/02; H01L21/208
Attorney, Agent or Firm:
Kiyoshi Minoura
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