To provide a method for removing an organic film, which is capable of reliably removing an organic film while suppressing an increase in the dielectric constant of a low dielectric constant insulating film.
The method for removing an organic film removes an organic film of a substrate to be processed on which a pattern of a laminated structure including both a low dielectric constant insulating film containing at least silicon, oxygen, and carbon and having a dielectric constant lower than silicon dioxide and the organic film formed on an upper layer of the low dielectric constant insulating film is formed. The organic film is removed by making plasma of a mixed gas of a first gas containing oxygen or nitrogen, a second gas represented by CxHy (x and y are positive integers), and a hydrogen gas act on the substrate to be processed.
NISHIMURA EIICHI
ASAKO RYUICHI
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