Title:
METHOD FOR RESTORING ELECTRICAL INSULATION OF SILICON NITRIDE FILM
Document Type and Number:
Japanese Patent JP3211992
Kind Code:
B2
Abstract:
PURPOSE: To restore the electrical insulation of a silicon nitride film the electrical insulation of which is deteriorated due to the irradiation of gallium ions by irradiating the deteriorated part of the film with ultraviolet rays.
CONSTITUTION: A focused-ion beam device is constituted of a sample chamber 1, ion irradiating device 2, gaseous starting material supplying device 3, sample stage 4, detector 6 which detects secondary particles generated from the surface of samples, picture displaying device 7, ion optical system controlling power source 8, sample stage driving device 9, ultraviolet ray radiating device 21, ultraviolet-ray controlling power source 31, etc. The device 21 is set in the chamber 1 and a sample 5 with a silicon nitride film, the electrical insulation of which is deteriorated due to the irradiation of a gallium ion beam, is irradiated with ultraviolet rays so as to restore the electrical insulation. The electrical insulation can be also restored when the silicon nitride film is irradiated with the gallium ion beam in a high-temperature atmosphere.
Inventors:
Yasuhiko Sugiyama
Toshiaki Fujii
Toshiaki Fujii
Application Number:
JP4702293A
Publication Date:
September 25, 2001
Filing Date:
March 08, 1993
Export Citation:
Assignee:
Seiko Instruments Inc.
International Classes:
B23K15/00; H01L21/26; H01L21/263; H01L21/265; H01L21/268; H01L21/302; H01L21/3065; H01L21/318; H01L21/3205; H01L21/324; H01L23/52; (IPC1-7): H01L21/318; H01L21/26; H01L21/263; H01L21/268; H01L21/3065; H01L21/3205
Domestic Patent References:
| JP2244740A | ||||
| JP60167433A | ||||
| JP58184732A |
Attorney, Agent or Firm:
Masaaki Sakaue
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