Title:
METHOD OF SELECTIVELY PATTERNING FOR GROWTH OF EPITAXIAL FILM ON SEMICONDUCTOR SUBSTRATE
Document Type and Number:
Japanese Patent JPS61135115
Kind Code:
A
Abstract:
A process is disclosed for selectively patterning epitaxial film growth on a semiconductor substrate. The process includes forming a masking member on the surface of the substrate, the masking member having at least two layers including a first layer disposed on the substrate and the second layer covering the first layer. A window is then opened in a selected portion of the second layer by removing that portion to expose the first layer thereunder. The first layer is then subjected to an etchant introduced through the window to dissolve a sufficient amount of the first layer to expose the substrate surface directly beneath the window, the first layer being adapted to preferentially dissolve at a substantially greater rate than the second layer so as to create an overhanging ledge portion with the second layer by undercutting the edges thereof adjacent to the window. The epitaxial film is then deposited on the exposed substrate surface directly beneath the window. Finally, an etchant is introduced through the window to dissolve the remainder of the first layer so as to lift-off the second layer and materials deposited thereon to fully expose the balance of the substrate surface.
Inventors:
SHELDON PETER (US)
HAYES RUSSELL E (US)
HAYES RUSSELL E (US)
Application Number:
JP26823885A
Publication Date:
June 23, 1986
Filing Date:
November 28, 1985
Export Citation:
Assignee:
US GOV ENERGY (US)
International Classes:
H01L21/033; H01L21/20; H01L21/205; H01L21/302; H01L21/306; H01L21/3065; (IPC1-7): H01L21/205; H01L21/302; H01L21/306
Domestic Patent References:
| JPS5394775A | 1978-08-19 | |||
| JPS49115647A | 1974-11-05 | |||
| JPS5891640A | 1983-05-31 | |||
| JPS58142526A | 1983-08-24 | |||
| JPS58143581A | 1983-08-26 |
Attorney, Agent or Firm:
Yukio Ogata