Title:
METHOD FOR SELECTIVELY PATTERNING SILICON GERMANIUM LAYER BY ION IMPLANTATION
Document Type and Number:
Japanese Patent JP2005033202
Kind Code:
A
Abstract:
To provide a method for selectively patterning a silicon germanium layer by ion implantation.
After P is selectively ion-implanted into the silicon germanium layer and properties of resistance to etching are given to the ion-implanted part of the silicon germanium layer, the part of the silicon germanium layer that is not ion-implanted is selectively removed by isotropic etching. Hereby, as in a structure in which a Si layer, a silicon germanium layer, and a Si layer are stacked sequentially, when the silicon germanium layer is introduced as an intermediate layer, it is possible to pattern only the silicon germanium layer without patterning the upper layer or the lower layer.
Inventors:
YUN EUN-JUNG
RI SEIEI
LEE CHANG-SUB
KIM SUNG-MIN
PARK DONG-GUN
RI SEIEI
LEE CHANG-SUB
KIM SUNG-MIN
PARK DONG-GUN
Application Number:
JP2004198585A
Publication Date:
February 03, 2005
Filing Date:
July 05, 2004
Export Citation:
Assignee:
SAMSUNG ELECTRONICS CO LTD
International Classes:
H01L21/20; H01L21/265; H01L21/306; H01L21/76; (IPC1-7): H01L21/306; H01L21/265
Domestic Patent References:
| JP2004128185A | 2004-04-22 | |||
| JPH0997899A | 1997-04-08 | |||
| JPH04322427A | 1992-11-12 |
Foreign References:
| WO2005036638A1 | 2005-04-21 |
Attorney, Agent or Firm:
Masatake Shiga
Takashi Watanabe
Takashi Watanabe