METHOD OF WORKING OF COMPOUND SEMICONDUCTOR - NIPPON TELEGRAPH & TELEPHONE

Title:

METHOD OF WORKING OF COMPOUND SEMICONDUCTOR

Document Type and Number:

Japanese Patent JPH0537082

Kind Code:

A

Abstract:

PURPOSE: To realize three-dimensional working of, for example, microvibrator microbridges, micromultibeams, and the like excellent in mechanical strength and shape essential to a microminiature, high-performance microsensors.

CONSTITUTION: After an Al GaAs layer 12 is epitaxially grown on a GaAs semiconductor substrate 11 and patterned as predetermined by the photolithography technique, the epitaxial grown layer is etched in the orthogonal (vertical) direction and then selectively etched only in the GaAs layer (horizontal) direction with an H2O2+NH4 based selective etchant to produce a levitated microcantilever 14 made of AlGaAs.

Inventors:

UENISHI YUJI
TANAKA HIDENAO
SUZUKI YOSHIO
UKITA HIROO

Application Number:

JP18758491A

Publication Date:

February 12, 1993

Filing Date:

July 26, 1991

Export Citation:

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Assignee:

NIPPON TELEGRAPH & TELEPHONE

International Classes:

B23P15/00; B81C99/00; H01L21/306; H01S5/00; (IPC1-7): B23P15/00; H01L21/306; H01S3/18

Attorney, Agent or Firm:

Mitsuishi Toshiro

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