蓄積電荷シンクを用いてMOSFETの線形性を改善することに使用される方法及び装置

Title:

蓄積電荷シンクを用いてMOSFETの線形性を改善することに使用される方法及び装置

Document Type and Number:

Japanese Patent JP5215850

Kind Code:

B2

Abstract:

An accumulated charge control (ACC) floating body MOSFET (ACC MOSFET), adapted to control nonlinear response of the MOSFET when the MOSFET is operated in an accumulated charge regime, comprising: a) a MOSFET having a floating body, wherein the floating body MOSFET selectively operates in the accumulated charge regime, and wherein accumulated charge is present in the body of the floating body MOSFET when the MOSFET operates in the accumulated charge regime; and b) an accumulated charge sink (ACS) operatively coupled to the body of the MOSFET, wherein the ACS removes or otherwise controls the accumulated charge in the MOSFET body.

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Inventors:

Brindle, christopher, n
Stubber, Michael, A
Kelly, dylan, jay
Kemering, Clint, Elle
Im San, George, Pea
Wellstand, Robert, Bee
Burgener, Mark, Elle

Application Number:

JP2008521544A

Publication Date:

June 19, 2013

Filing Date:

July 11, 2006

Export Citation:

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Assignee:

Peregrine Semiconductor Corporation

International Classes:

H01L29/786; H01L21/822; H01L21/8234; H01L21/8238; H01L27/04; H01L27/06; H01L27/088; H01L27/092; H03K17/00

Domestic Patent References:

JP61502922A
JP2000174283A

Attorney, Agent or Firm:

Tadahiko Ito
Shinsuke Onuki
Tadashige Ito

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