Title:
HIGH-K誘電材料をエッチングする方法とシステム。
Document Type and Number:
Japanese Patent JP2007502547
Kind Code:
A
Abstract:
A method for etching a high-k dielectric layer on a substrate in a plasma processing system is described. The high-k dielectric layer can, for example, comprise HfO2. The method comprises elevating the temperature of the substrate above 200° C. (i.e., typically of order 400° C.), introducing a process gas comprising a halogen-containing gas, igniting a plasma from the process gas, and exposing the substrate to the plasma. The process gas can further include a reduction gas in order to improve the etch rate of HfO2 relative to Si and SiO2.
Inventors:
Chen, Lee
Hiromitsu Kambara
Nobuhiro Iwama
Hiromitsu Kambara
Nobuhiro Iwama
Application Number:
JP2006532962A
Publication Date:
February 08, 2007
Filing Date:
May 11, 2004
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
H01L21/3065; H01L21/00; H01L21/311; H01L21/324; H01L21/336; H01L21/461; H05H1/24; H05H1/46
Attorney, Agent or Firm:
Takehiko Suzue
Satoshi Kono
Makoto Nakamura
Kurata Masatoshi
Takashi Mine
Yoshihiro Fukuhara
Toshio Shirane
Sadao Muramatsu
Nobuhisa Nogawa
Ryo Hashimoto
Tetsuya Kazama
Satoshi Kono
Makoto Nakamura
Kurata Masatoshi
Takashi Mine
Yoshihiro Fukuhara
Toshio Shirane
Sadao Muramatsu
Nobuhisa Nogawa
Ryo Hashimoto
Tetsuya Kazama