Title:
エッチング特性を改良するためのハードマスクを処理する方法およびシステム。
Document Type and Number:
Japanese Patent JP2007529899
Kind Code:
A
Abstract:
During pattern transfer to a film stack, the hard mask layer, such as a tunable etch resistant antireflective coating (TERA), is consumed when etching the underling layer(s), leading to reduced etch performance and potential damage to the underlying layer(s), such as lack of profile control. A method of and system for preparing a structure on a substrate is described comprising: preparing a film stack comprising a thin film, a hard mask formed on the thin film, and a layer of light-sensitive material formed on the hardmask; forming a pattern in the layer of light-sensitive material; transferring the pattern to the hard mask; removing the layer of light-sensitive material; treating the surface layer of the hard mask in order to modify the surface; and transferring the pattern to the thin film.
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Inventors:
Mosden, Aelan
Fan, dang
Fan, dang
Application Number:
JP2007503903A
Publication Date:
October 25, 2007
Filing Date:
February 10, 2005
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
H01L21/3065; G03F7/00; G03F7/09; G03F7/11; G03F7/36; G03F7/40; G03F7/42; H01L21/033; H01L21/308; H01L21/311; H01L21/3213; G03F7/075
Attorney, Agent or Firm:
Takehiko Suzue
Satoshi Kono
Makoto Nakamura
Kurata Masatoshi
Takashi Mine
Yoshihiro Fukuhara
Toshio Shirane
Sadao Muramatsu
Nobuhisa Nogawa
Katsu Sunagawa
Ryo Hashimoto
Tetsuya Kazama
Satoshi Kono
Makoto Nakamura
Kurata Masatoshi
Takashi Mine
Yoshihiro Fukuhara
Toshio Shirane
Sadao Muramatsu
Nobuhisa Nogawa
Katsu Sunagawa
Ryo Hashimoto
Tetsuya Kazama