To provide a microminiature semiconductor device structure which hardly rises up when it is mounted on a board even though it is miniaturized and is improved in mounting efficiency so as to be mounted at a high speed, and to provide its manufacturing method.
Electrodes provided on the front and rear end face of a semiconductor chip are each formed of a conductor having five or more sides, and an insulator is formed between the terminals of the semiconductor chip for the formation of the microminiature semiconductor device, and a method of manufacturing the microminiature semiconductor device includes processes of cutting grooves on the first main surface of a semiconductor wafer by scribing, filling an insulator in the grooves cut in the first main surface of the wafer, cutting grooves in the second main surface of the wafer by scribing so as to enable the grooves to bear against the bottoms of the front insulators buried in the first main surface, filling an insulator into the grooves cut in the second main surface of the wafer, forming conductive electrodes on all the first and second main surface of the wafer respectively, and dividing the semiconductor wafer subjected to the above processes into the separate microminiature semiconductor devices.
MIZUKAMI MINORU
Tomoyasu Sakaguchi
Hiroki Naito
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