To provide a micropattern forming method using a highly practical fluorine-containing polymer capable of improving dry etching resistance with respect to a fluorine-containing polymer having high transparency to exposure light of a short wavelength such as F2 excimer laser light.
The micropattern forming method includes (I) a step of preparing a resist composition comprising (a) a fluorine-containing polymer containing a protective group, (b) a photoacid generator and (c) a solvent; (II) a step of forming a resist film comprising the resist composition on a substrate; (III) a step of exposing a prescribed area of the resist film; and (IV) a step of forming a micropattern by selectively removing the exposed portions of the resist film by development after the exposure, wherein the fluorine-containing polymer (a) containing the protective group is a fluorine-containing polymer comprising an OH-containing norbornene structural unit (M2-1A) and a norbornene structural unit (M2-1B) containing a saturated hydrocarbon group including a structure of a bicyclo saturated hydrocarbon as a protective group.
YAMASHITA TSUNEO
ISHIKAWA TAKUJI
YOSHIDA TOMOHIRO
HAGIWARA TAKUYA
FURUKAWA TAKAMITSU
SEMICONDUCTOR LEADING EDGE TEC
Kei Saki
Fumio Akiyama
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