Title:
MICROWAVE PLASMA GENERATING DEVICE
Document Type and Number:
Japanese Patent JP3839395
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a microwave plasma generating device capable of generating low-temperature plasma operating at atmospheric pressure (or pressure close to it) by using a small device.
SOLUTION: The microwave plasma generating device generates plasma gas by exciting gas close to the atmospheric pressure by using a microwave. The length of a coaxial resonance cavity 102 is an integral multiple of a half of an excitation wavelength, and central conductors 205, 208 are made shorter arranged with a non-metal pipe 103 for a gas flow channel set along the center of the central conductors 205, 208. Gas injected from one end is excited by the microwave at a gap where the non-metal pipe is not covered with the central conductors and discharged from the other end forming plasma. The cavity is excited by a microwave supply circuit.
Inventors:
Eiji Tanabe
Application Number:
JP2002339098A
Publication Date:
November 01, 2006
Filing Date:
November 22, 2002
Export Citation:
Assignee:
ET Co., Ltd.
International Classes:
H05H1/30; H05H1/46; B01J19/08; H01L21/3065; H05B7/18; (IPC1-7): H05H1/30; H05B7/18; //B01J19/08
Domestic Patent References:
| JP2000012283A | ||||
| JP2001357999A | ||||
| JP7321096A | ||||
| JP4147099A | ||||
| JP6140186A | ||||
| JP53117198A | ||||
| JP3002600U | ||||
| JP64002400U | ||||
| JP4230019A |
Attorney, Agent or Firm:
Toshi Inoguchi
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