PURPOSE: To prevent an oxide film from being destroyed during an ion impregnation operation without increasing a production process of a semiconductor integrated circuit by a method wherein a wiring part identical to a gate wiring part is grounded additionally on a pattern.

CONSTITUTION: Resists 4 are connected by using a gate wiring part 3 or a resist 4; the gate wiring part 3 is formed as a lattice pattern along a cutting margin 9, and is brought into contact with a high-conductivity metal ring 10 at edge of a wafer; the metal ring 10 is grounded. A newly added gate wiring part 3 comes into contact with the resist 4 during an ion impregnation operation; an electric charge 6 during the ion impregnation operation is passed through this wiring part 13 and lowers a ground potential by the metal ring 10 at the edge of the wafer.