水分検出装置、生体中水分検出装置、自然産物中水分検出装置、および製品・材料中水分検出装置

Title:

水分検出装置、生体中水分検出装置、自然産物中水分検出装置、および製品・材料中水分検出装置

Document Type and Number:

Japanese Patent JP4743458

Kind Code:

B2

Abstract:

To provide a moisture detection device capable of detecting moisture with high sensitivity by using an InP system photodiode wherein a dark current is reduced without a cooling mechanism and light-receiving sensitivity is enlarged to a wavelength of 1.8 μm or more.

This moisture detection device is described as follows: a light receiving layer 3 has a multiple quantum well structure of III-V group semiconductor; a pn junction 15 is formed by diffusing selectively an impurity element into the light receiving layer; band gap energy of a diffusion concentration distribution adjustment layer is smaller than band gap energy of III-V group semiconductor substrate; an impurity concentration in the light receiving layer is 5×1016/cm3or less; an n-type impurity concentration before diffusion of the diffusion concentration distribution adjustment layer is 2×1015/cm3or less, and has a low impurity concentration range in a thickness range on the light receiving layer side; and a detection device receives light having at least one wavelength included in an absorption band of water having the wavelength of 3 μm or less, to thereby detect moisture.

Inventors:

Yasuhiro Inoguchi
Yoichi Nagai

Application Number:

JP2011059487A

Publication Date:

August 10, 2011

Filing Date:

March 17, 2011

Export Citation:

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Assignee:

Sumitomo Electric Industries, Ltd.

International Classes:

H01L31/10; B82Y10/00; B82Y15/00; B82Y20/00; G01J1/02; G01N21/01; G01N21/35; G01N21/3554; G01N21/359; H01L27/146

Domestic Patent References:

JP2008153311A
JP2007080920A
JP63001079A
JP5160429A
JP2008270760A
JP2007201432A
JP2008171885A
JP2008205001A
JP5160426A
JP3038887A

Other References:

M.Horita et al.,Metalorganic vapor phase epitaxy growth of InGaAsP multi quantum well laser diodes using entirely organic sources,Journal of Crystal Growth,1994年,Vol.145, No.1-4,pp.886-891
R.Sidhu et al.,A long-wavelength photodiode on InP using lattice-matched GaInAs-GaAsSb type-II quantum wells,IEEE Photonics Technology Letters,2005年,Vol.17, No.12,pp.2715-2717
E.Plis et al.,Midwave infrared type-II InAs/GaSb superlattice detectors with mixed interfaces,Journal of Applied Physics,2006年,Vol.100, No.1,014510
C.P.Seltzer et al.,Reliable 1.5 mu m buried heterostructure, separate confinement, multiple quantum well (BH-SC-MQW) lasers entirely grown by metalorganic vapour-phase epitaxy(MOVPE),IEEE Electronics Letters,1989年,Vol.25, No.21,pp.1449-1451

Attorney, Agent or Firm:

Patent Corporation Heart Cluster
Seiichi Watanabe

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