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Title:
モールドの形成方法、回折格子の形成方法、および分布帰還型半導体レーザの製造方法
Document Type and Number:
Japanese Patent JP5205866
Kind Code:
B2
Abstract:
A process using the nanoimprint technique to form the diffraction grating for the DFB-LD is disclosed. The process includes (a) coating a resist for the EB exposure on a dummy substrate, (b) irradiating the resist as varying the acceleration voltage, (c) forming a resist pattern by developing the irradiated resist, (d) coating the SOG film on the patterned resist, (e) attaching the silica substrate on the cured SOG film, and (f) removing the dummy substrate with the resist from the SOG film and the silica substrate. Using the mold thus formed, the diffraction grating for the DFB-LD is formed by the nanoimprint technique.

Inventors:
Masateru Yanagisawa
Application Number:
JP2007217512A
Publication Date:
June 05, 2013
Filing Date:
August 23, 2007
Export Citation:
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Assignee:
Sumitomo Electric Industries, Ltd.
International Classes:
G02B5/18; H01S5/12; H01S5/227
Domestic Patent References:
JP2007156384A
JP2004106320A
JP5109618A
JP63047705A
JP7508593A
JP2003232909A
JP2005539393A
Foreign References:
WO2007029810A1
Attorney, Agent or Firm:
Yoshiki Hasegawa
Shiro Terasaki
Yoshiki Kuroki
Ichira Kondo