To manufacture the integrated circuit with high precision by decreasing a resistance ratio of resistor dividers in a thermal compensation device connecting to a device with an inverse threshold voltage and to decrease an occupied area.

A monolithic semiconductor integrated circuit provided with a device 210 with a prescribed inverse continuity threshold voltage that is a Zener diode chain (consisting of Zener diodes 220-240) has a thermal compensation device 250 connected in series with the device 210 and consisting of a plurality of diode threshold voltage multipliers connected in series. Each multiplier is made up of a resistor divider (R1i, R2i) and a low voltage transistor (Ti) or two Darlington connection low voltage transistors or over.