Title:
MONOLITHTIC SEMICONDUCTOR DEVICE FOR GENERATING SURFACE SKIMMING LASER
Document Type and Number:
Japanese Patent JPH06224518
Kind Code:
A
Abstract:
PURPOSE: To easily select wavelength output from several different values by providing a set of epitaxial layers, including at least two active region layers adjusted to a wavelength different from a low-clad layer on a common substrate. CONSTITUTION: For a semiconductor main body 10, a thick low waveguide layer or clad layer 12 and thin layers 13-15 for respectively constituting one of the three active regions of a surface-skimming laser are continuously grown on a P-type or a semi-insulation substrate 11 by an MOCVD process, for instance. Then, the active layer 15 which is closest to an active surface 16 is provided with a shortest band gap and is raised by a longest wavelength, the band gaps and raising wavelengths of the remaining two layers 14 and 13 are selected, so as to gradually increase and respectively decrease as a distance from the active surface 16 gradually is increased towards a substrate 11. From this structure, a single-surface skimming laser, a dual-surface skimming laser or a three-beam radiation surface-skimming laser is assembled.
Inventors:
ROBAATO ERU SOONTON
Application Number:
JP24889893A
Publication Date:
August 12, 1994
Filing Date:
October 05, 1993
Export Citation:
Assignee:
XEROX CORP
International Classes:
H01S5/00; H01S5/18; H01S5/40; H01S5/42; H01S3/08; H01S5/02; H01S5/042; H01S5/183; H01S5/34; (IPC1-7): H01S3/18
Attorney, Agent or Firm:
Atsushi Nakajima (2 outside)