Title:
MOS SOLID-STATE IMAGING DEVICE
Document Type and Number:
Japanese Patent JP3472102
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To form a device provided with a light-proof film structure which does not easily reflect the diagonal incident effective light beam when it is applied by forming a lower light-proof film.
SOLUTION: A silicon oxide film 104 is formed on a substrate 101, including a photodiode area 102 and a LOCOS layer 103 and an extending wiring 105 formed by polysilicon on the LOCOS layer 103 is imbecked in this silicon oxide film 104. A vertical signal line 106 and the power supply line 104 formed on the silicon oxide film 104 are formed as a first layer which is the lower layer of a plurality of metal layers by a metallic material having light-proof property such as aluminum. Therefore, since the light-proof film is formed by the first layer near the photodiode area 102, the incident light is will not shielded by this light-proof film and it is incident effectively to the photodiode area 102 for improving the level of photoelectric conversion signal.
Inventors:
Nagataka Tanaka
Hidefumi Ohba
Ryohei Miyakawa
Michio Sasaki
Keiji Mabuchi
Hidefumi Ohba
Ryohei Miyakawa
Michio Sasaki
Keiji Mabuchi
Application Number:
JP25334497A
Publication Date:
December 02, 2003
Filing Date:
September 18, 1997
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L27/146; H01L27/14; H04N5/335; H04N5/369; H04N5/374; H04N5/3745; (IPC1-7): H01L27/146; H01L27/14; H04N5/335
Domestic Patent References:
| JP6058779A | ||||
| JP9238287A | ||||
| JP8293591A |
Other References:
【文献】国際公開97/007631(WO,A1)
Attorney, Agent or Firm:
Takehiko Suzue (6 outside)