Title:
MOS-TYPE SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JPS52128075
Kind Code:
A
Abstract:
PURPOSE: To prevent the deterioration of ion voltage property by increasing the impurity density at the drift channel section, and also to increase the cutoff frequency by increasing the work function difference between poly crystal Si gate and substrate.
Inventors:
INOUE MICHIHIRO
KIMURA TAKESHI
KIMURA TAKESHI
Application Number:
JP4509676A
Publication Date:
October 27, 1977
Filing Date:
April 20, 1976
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L21/265; H01L29/78; H01L29/423; H01L29/49; (IPC1-7): H01L21/265; H01L29/06; H01L29/62; H01L29/78