Title:
多層構造及びその製造プロセス
Document Type and Number:
Japanese Patent JP5380306
Kind Code:
B2
Abstract:
A process for fabricating a multilayer structure is provided as well as the structure itself. In accordance with one embodiment, the process includes growing a growth layer on a silicon substrate by epitaxial growth, forming at least one pattern from the growth layer, depositing an oxide layer on the silicon substrate, transferring a silicon active layer onto the oxide layer, forming a cavity in the silicon active layer oxide layer above the pattern, and growing a III-V material in the cavity.
Inventors:
Fabrice Returtur
Application Number:
JP2009549858A
Publication Date:
January 08, 2014
Filing Date:
January 28, 2008
Export Citation:
Assignee:
Soitec
International Classes:
H01L21/20; B32B9/00; B32B18/00; H01L21/02; H01L21/205; H01L27/12; H01L27/15
Domestic Patent References:
| JP49019028A | ||||
| JP60210832A | ||||
| JP2004335837A |
Foreign References:
| US20040012037 |
Attorney, Agent or Firm:
Yoshikazu Tani
Kazuo Abe
Kazuo Abe