Title:
MULTIELECTRODE PLASMA TREATMENT DEVICE
Document Type and Number:
Japanese Patent JPH0684812
Kind Code:
A
Abstract:
PURPOSE: To provide a device and method capable of independently controlling the stress, depositing rate and evenness of deposited films as well as efficiently cleaning a processing chamber. CONSTITUTION: The plasma processor 10 provided with a shower head assembly 52, a radio frequency chuck 4 and a screen electrode 66 to be connected to a low-frequency power supply 108, high-frequency power supplies 100, 132 further to be left intact in electrically floating state. Furthermore, the screen 70 of the screen electode 66 encircling the shower head assembly 52 and a semiconductor wafer 12 to be connected to the power supplies 100, 108 for affecting the plasma processing environment 62 as well as independently controlling the concentration, evenness, etc., of the plasma.
Inventors:
MEERUDATSUDO EMU MOSUREHI
SESHIRU JIEI DEEBISU
JIYON JIYOONZU
ROBAATO TEII MASHIYUUZU
SESHIRU JIEI DEEBISU
JIYON JIYOONZU
ROBAATO TEII MASHIYUUZU
Application Number:
JP15245793A
Publication Date:
March 25, 1994
Filing Date:
June 23, 1993
Export Citation:
Assignee:
TEXAS INSTRUMENTS INC
International Classes:
H01L21/205; C23C16/44; C23C16/509; C23C16/517; H01J37/32; H01L21/302; H01L21/3065; H05H1/46; (IPC1-7): H01L21/205; H01L21/302; H05H1/46
Attorney, Agent or Firm:
Akira Asamura (3 outside)
Next Patent: LIQUID PHASE EPITAXIAL GROWTH APPARATUS