Title:
MULTIFINGERED BIPOLAR TRANSISTOR AND ANALOG SIGNAL AMPLIFIER
Document Type and Number:
Japanese Patent JP3289696
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To reduce an occupied area and increase the degree of freedom of layout in a multifinger type bipolar transistor of high gain.
SOLUTION: This bipolar transistor is a multifingered bipolar transistor provided with a plurality of emitter fingers 101, a ballast resistance 102 connected in series with each of the emitter fingers, and a capacitor 103 connected in parallel with each of the ballast resistances. The ballast resistance 102 is formed by clamping a resistance body 105 with an emitter wiring E and the emitter finger. The capacitor 103 is formed by clamping an insulating layer 108 with the emitter wiring and the emitter finger.
Inventors:
Tomoo Hirayama
Application Number:
JP5197899A
Publication Date:
June 10, 2002
Filing Date:
February 26, 1999
Export Citation:
Assignee:
NEC
International Classes:
H01L29/73; H01L21/331; H03F3/213; H03F3/60; (IPC1-7): H01L21/331; H01L29/73
Domestic Patent References:
| JP8222577A | ||||
| JP77014A | ||||
| JP8279561A |
Attorney, Agent or Firm:
Nobuo Takahashi (3 outside)