多層膜構造体、及び素子構造

Title:

多層膜構造体、及び素子構造

Document Type and Number:

Japanese Patent JP4102880

Kind Code:

B2

Abstract:

To provide a new compound that functions as a semiconductor layer or an insulated layer the grid constant of which is close to that of a cobalt doped titanium dioxide membrane and that does not inhibit each epitaxial growth.

The subject mixed crystalized titanium dioxide is formed by mixed-crystalizing at least one of mixed crystalized substances selected from hafnium dioxide, zirconium dioxide and germanium dioxide with titanium dioxide.

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Inventors:

Kawasaki Masashi
Tomoaki Fukumura
Akira Otomo
Toyosaki Hidemi
Yasuhiro Yamada
Hideo Ohno
Fumi Matsukura Thank you

Application Number:

JP2004046540A

Publication Date:

June 18, 2008

Filing Date:

February 23, 2004

Export Citation:

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Assignee:

Tohoku University

International Classes:

C01G25/00; C01G27/00; H01F10/16; H01F10/193; H01F41/30; H01L21/8246; H01L27/105; H01L29/78; H01L29/82; H01L43/08

Domestic Patent References:

JP2003238120A
JP62177502A
JP2005075700A
JP10236824A
JP2000327329A
JP10139435A
JP10087330A
JP2002145622A

Other References:

Y. Matsumoto et al.,Room-Temperature Ferromagnetism in Transparent Transition Metal-Doped Titanium Dioxide,Science,米国,2001年 2月 2日,Vol.291,pp.854-856

Attorney, Agent or Firm:

Kenji Sugimura
Kosaku Sugimura
Kiyoshi Kuruma
Shiro Fujitani
Tatsuya Sawada

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