Title:
MULTILAYER INTERCONNECTION STRUCTURE
Document Type and Number:
Japanese Patent JPS59198734
Kind Code:
A
Abstract:
PURPOSE:To produce the titled multilayer interconnection thermally stable with high reliability by a method wherein intermediate layers with excellent adhesion filling the role of a barrier restricting the reaction between a conductive layer and an interlayer insulating layer. CONSTITUTION:Metallic wirings 3a, 3b as the first layer and an interlayer insulating film 4 are formed and after forming a throughhole 7 in the interlayer insulating film 4, an intermediate metallic film 12 made of Ti compound such as Ti or TiW, TiN etc. is thinly formed by means of CVD process, sputtering process and electronic beam heating evaporation process etc. then an Al layer 8 as the second layer metallic wiring is formed by means of the same CVD process, sputtering process and electronic beam heating evaporation process to cover the specified wiring part with photoresist film 9. Next the Al layer 8 and the intermediate metallic layer 12 as the second layer are patterned by etching utilizing the photoresist film 9 as a mask to form a metallic wiring 8a and an intermediate metallic wiring layer 12a as the second layer further to remove the photoresist film 9. Finally a passivation film 10 made of Si3N4 film may be formed on overall surface to complete the multilayer interconnection structure.
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Inventors:
OKAMOTO TATSUROU
EGUCHI KOUJI
KOTANI HIDEO
EGUCHI KOUJI
KOTANI HIDEO
Application Number:
JP7427683A
Publication Date:
November 10, 1984
Filing Date:
April 25, 1983
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L23/52; H01L21/3205; H01L21/768; H01L23/532; (IPC1-7): H01L21/92
Domestic Patent References:
| JPS5640260A | 1981-04-16 |
Attorney, Agent or Firm:
Masuo Oiwa