Title:
MULTILAYER THERMIONIC ELEMENT AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JPS5646577
Kind Code:
A
Abstract:
PURPOSE:To obtain a multilayer thermionic element by a simple method while improving the flexibility of the shape of the element by utilizing a plasma flame spraying process when forming the element. CONSTITUTION:An N type CoSi substrate 2 is mounted by using a fixing member 3 on a cooling plate 1, and a flame spraying gun 4 of an Ar/H2 plasma flame sprayer is arranged as opposed with the substrate 2. The device is thus constructed, Ar gas, H2 gas, the first and second powders are fed from directions 5, 6, 7 and 8 respectively into a welding gun 4, and a desired P-N junction is formed on the substrate 2 by the plasma torch 9 at the end. That is, Al2O3 film 10 and a CrSi2 film 11 of a P type material are covered on the substrate 2, a P-N junction 12 is first formed thereon, one thermionic element factor 13 is first formed, subsequently Al2O3 film 14, N type CrSi film 15, Al2O3 film 16, and P type CrSi2 film 17 are laminated thereon and precipitated, a P-N junction 18 is thus formed, and another thermionic element factor 19 is thus formed. Thus, there can be obtained two factors 13, 19 in a multilayer structured thermionic element.
Inventors:
OCHIAI TATSUSHIROU
NARUMIYA YOSHIKAZU
OOTA JIYUNPEI
NAKASHIMA TAKASHI
NARUMIYA YOSHIKAZU
OOTA JIYUNPEI
NAKASHIMA TAKASHI
Application Number:
JP12210979A
Publication Date:
April 27, 1981
Filing Date:
September 25, 1979
Export Citation:
Assignee:
TDK ELECTRONICS CO LTD
International Classes:
H01L35/32; H01L35/22; H01L35/34; (IPC1-7): H01L35/32; H01L35/34