Title:
MULTILAYERED DIELECTRIC STACK AND ITS METHOD
Document Type and Number:
Japanese Patent JP2001267566
Kind Code:
A
Abstract:
To provide a multilayered dielectric stack having alternate layers of high-dielectric material and insertion material, which can be used in MOS transistor and an integrated circuit structure.
Integrated circuit(IC) structure for an IC containing the multilayered dielectric stack includes a) a first dielectric layer which contains first dielectric material and covers a semiconductor substrate, b) a second dielectric layer which contains a second dielectric material and covers the first dielectric layer, c) a third dielectric layer which contains the first dielectric material and covers the first and second dielectric layers, and d) an electrode which covers the dielectric stack.
Inventors:
YAN-JUN MA
YOSHI ONO
YOSHI ONO
Application Number:
JP2001020773A
Publication Date:
September 28, 2001
Filing Date:
January 29, 2001
Export Citation:
Assignee:
SHARP KK
International Classes:
H01L29/78; B82B1/00; H01L21/28; H01L21/335; H01L21/336; H01L21/8246; H01L27/105; H01L29/51; (IPC1-7): H01L29/78; H01L27/105
Attorney, Agent or Firm:
Shusaku Yamamoto