PURPOSE: To obtain a multiwavelength semiconductor element array in which current diffusion layer and ohmic layer of each LED are laminated through single regrowth by applying a new crystal InGaAlP.

CONSTITUTION: On the surface of a layer for yellow LED deposited on an n-type GaAs substrate 14 provided with respective layers including active layers 16, 21 for two colors, an SiO2 film 27 is deposited and partially removed through PEP and then the crystal layers 25, 26 of both LEDs are exposed through etching. The SiO2 film 28 is deposited again and partially removed to make a window 29 in adjacent to part (a). n-GaAs layers 19, 24 and n-(GaAl)P layers 18, 23 are then etched to provide a light emitting region (b) for yellow and green LED directly below part (a) of the SiO2 film 28. A new SiO2 film 30 is deposited thereon and subsequently removed except the part for forming an LED and then a current diffusion layer 31 and an ohmic layer 32 are laminated thereon. Consequently, a multiwavelength semiconductor element array can be formed by laminating and heat treating Au-Zn 33, Au-Ge 34, and an ohmic electrode 35 as an ohmic layer.