PURPOSE: To produce a silicon single crystal by the Czochralski method as a silicon single crystal inhibiting he occurrence of etch pits of ≥0.07μm size when a silicon wafer sliced from the silicon single crystal is subjected to mirror polishing and ammonia cleaning.
CONSTITUTION: In a process for producing a silicon single crystal by the Czochralski method, a silicon single crystal is passed through the temp. range of 1,100-850°C in ≤250min residence time in a crystal producing furnace. This single crystal is preferably passed through the temp. range from a temp. immediately after solidification to 850°C in ≤400min residence time in the furnace. The resultant silicon single crystal is excellent. in the quality and inhibits the occurrence of etch pits of ≥0.07μm size when a silicon wafer sliced from the silicon single crystal is subjected to mirror polishing and ammonia cleaning.
KOJIMA KIYOSHI
TAKEBAYASHI MASARU
NAKASHIZU TSUNEO
NITTETSU DENSHI KK